DEEP TRAPS IN MOLECULAR-BEAM-EPITAXIAL GAAS GROWN AT LOW-TEMPERATURES

Authors
LOOK DC FANG ZQ YAMAMOTO H SIZELOVE JR MIER MG STUTZ CE
Citation
Dc. Look et al., DEEP TRAPS IN MOLECULAR-BEAM-EPITAXIAL GAAS GROWN AT LOW-TEMPERATURES, Journal of applied physics, 76(2), 1994, pp. 1029-1032
Citations number
26
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
76
Issue
2
Year of publication
1994
Pages
1029 - 1032
Database
ISI
SICI code
0021-8979(1994)76:2<1029:DTIMGG>2.0.ZU;2-H
Abstract
Deep-level transient spectroscopy has been performed on Si-doped GaAs layers grown by molecular-beam epitaxy at substrate temperatures of 40 0-450-degrees-C. The lambda effect is taken into account and overlappi ng peaks are analyzed numerically. An 0.65 eV electron trap of concent ration 2 X 10(16) cm-3 is believed to be related to the As(Ga)-associa ted 0.65 eV Hall-effect center, and also to the trap EB4 found in elec tron-irradiated GaAs.