PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR CHANNEL SHEET CHARGE MEASURED BY PHOTOLUMINESCENCE

Authors
PARSONS CA KIM MH QUINN WE HERRMANN HB SWIRHUN SE BRIERLEY SK
Citation
Ca. Parsons et al., PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR CHANNEL SHEET CHARGE MEASURED BY PHOTOLUMINESCENCE, Journal of applied physics, 76(2), 1994, pp. 1343-1345
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
76
Issue
2
Year of publication
1994
Pages
1343 - 1345
Database
ISI
SICI code
0021-8979(1994)76:2<1343:PHTCSC>2.0.ZU;2-K
Abstract
Nondestructive room temperature photoluminescence of the InGaAs channe l of a pseudomorphic high electron mobility transistor is presented as a function of bias applied to a semitransparent gate. The channel ele ctron sheet concentration is evaluated via line-shape fitting of the p hotoluminescence spectrum. Excellent agreement with electrically deriv ed values of the channel charge was found. Information on the symmetry of the channel potential is also provided by the results of the photo luminescence line-shape fit.