A. Rousseau et al., MICROWAVE-DISCHARGE IN H-2 - INFLUENCE OF H-ATOM DENSITY ON THE POWERBALANCE, Journal of physics. D, Applied physics, 27(7), 1994, pp. 1412-1422
We investigate a source of H atoms generated by a low-pressure surface
wave discharge (2.45 GHz). We study the influence of microwave power
both on the discharge characteristics and on the H atom density, which
has been measured by actinometry. Dissociation levels of H-2 are much
higher (75%) at low microwave power than at high power (10%). Unlike
what has been found in oxygen surface wave plasmas, discharge characte
ristics depend strongly on microwave power, due to an important coupli
ng between discharge equilibrium and kinetics of the atomic hydrogen.
These results are explained taking into account the effect of discharg
e tube wall temperature on atomic recombination. The wall recombinatio
n probability gamma is estimated as a function of the microwave power:
it ranges from 6 x 10(-3) to 6 X 10(-2), which is very high in compar
ison with values determined previously under post-discharge conditions
.