MICROSCOPE SPECTROPHOTOMETRIC STUDY OF GAAS ALXGA1-XAS MBE STRUCTURES/

A series of GaAs/AlxGa1-xAs MBE structures, in which x ranged from 0.1 0 to 0.40, was studied using microscope spectrophotometry (MSP). The M SP reflectance measurements were found to be extremely sensitive to co mpositional variation, with a clear inverse relationship between Al co ntent and reflected intensity, and a sympathetic relationship between composition and dispersion. Theoretical optical models were simulated and fitted to the measured data to give layer dimensions which fitted remarkably well with sims data. It is concluded that msp has great pot ential for the non-destructive metrology and quality control of simple and complex multilayer structures.