HOT-CARRIER SCATTERING AT INTERFACIAL DISLOCATIONS OBSERVED BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY

Authors
SIRRINGHAUS H LEE EY VONKANEL H
Citation
H. Sirringhaus et al., HOT-CARRIER SCATTERING AT INTERFACIAL DISLOCATIONS OBSERVED BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY, Physical review letters, 73(4), 1994, pp. 577-580
Citations number
20
Categorie Soggetti
Physics
Journal title
Physical review letters → ACNP
ISSN journal
00319007
Volume
73
Issue
4
Year of publication
1994
Pages
577 - 580
Database
ISI
SICI code
0031-9007(1994)73:4<577:HSAIDO>2.0.ZU;2-Z
Abstract
In situ ballistic-electron-emission microscopy (BEEM) has been perform ed at 77 K on partially strain-relaxed, epitaxial CoSi2/Si(111) films grown by molecular beam epitaxy. Hot electron scattering at individual interfacial dislocations has been observed for the first time by BEEM . Standing wave formation in the metal and changes of the surface elec tronic structure give rise to significant contrast in BEEM images. Apa rt from the dislocation- and surface-induced contrast, the interfacial transmission is generally found to be homogeneous.