DEPENDENCE OF ELECTRICAL-CONDUCTIVITY AND BANDGAP OF THE GRADED SYSTEM CDTE1-XSX ON THE STRUCTURE AND ANNEALING TREATMENT

Graded thin films of the system Cd Te1-xSx were prepared by evaporatio n from two sources and their structures, energy gaps and electrical co nductivity were studied as functions of annealing temperature. X-ray d iffraction and optical analysis showed a mixture of cubic and hexagona l structures. Further, the spectroscopic examination showed that the b andgap of the graded thin film covered all the energy gap values in th e range from about 1.45 eV for Cd Te to about 2.45 eV for Cd S. Electr ical conductivity measurements were made and discussed. Samples doped within the range 1-2% In were n-type and the doping reduced the values of energy gap and also the conductivity.