PHOTOLUMINESCENCE OF SINGLE INAS QUANTUM DOTS OBTAINED BY SELF-ORGANIZED GROWTH ON GAAS

We present photoluminescence data on InAs quantum dots grown by molecu lar beam epitaxy on GaAs. Through the reduction of the number of emitt ing dots in small mesa structures, we evidence narrow lines in the spe ctra, each associated with a single InAs dot. Beyond the statistical a nalysis allowed by this technique, our results indicate short capture and relaxation times into the dots. This approach opens the route towa rds the detailed optical study of high quality easily fabricated singl e semiconductor quantum dots.