ION-INDUCED ALKALI-SILICON INTERFACES - ATOMISTIC SIMULATIONS OF COLLISIONAL EFFECTS

Authors
ECKSTEIN W HOU M SHULGA VI
Citation
W. Eckstein et al., ION-INDUCED ALKALI-SILICON INTERFACES - ATOMISTIC SIMULATIONS OF COLLISIONAL EFFECTS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 119(4), 1996, pp. 477-486
Citations number
23
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
119
Issue
4
Year of publication
1996
Pages
477 - 486
Database
ISI
SICI code
0168-583X(1996)119:4<477:IAI-AS>2.0.ZU;2-S
Abstract
The bombardment of Si with Cs is investigated by computer simulation w ith the program TRIDYN, The dynamic target changes due to the bombardm ent as composition profiles and the corresponding changes in sputterin g yield and reaction coefficient are studied as functions of incident conditions, The incident energy is varied from 0.1 to 100 keV, and for 4 and 40 keV the dependence on the incident angle is considered. The dynamic results are compared with data from static calculations (low f luence),The influence of interaction potentials and of the choice of t hree surface binding energy models on the results are discussed.