COMPARISON OF TOF-ERDA AND NUCLEAR-RESONANCE REACTION TECHNIQUES FOR RANGE PROFILE MEASUREMENTS OF KEV ENERGY IMPLANTS

A comparative study on the range measurements of keV energy implants b y the Time-of-Flight Elastic Recoil Detection Analysis (TOF-ERDA) and conventionally used nuclear resonance reaction methods has been perfor med for 20-100 keV N-15(+) ions implanted into crystalline silicon, Ra nge profiles of N-15 atoms were chosen because they can be measured ac curately using a very strong and narrow resonance at E(p) = 429.6 keV in the reaction N-15(p,alpha gamma)C-12 which provides a challenging t est for other methods, The measured range profiles were simulated by m olecular dynamics calculations where the interatomic N-Si pair potenti al is deduced from first principles calculations. The electronic stopp ing power for 20-100 keV nitrogen ions in silicon is deduced from the comparison of the measured and simulated range profiles. The results a re discussed in the framework of the applicability of the TOF-ERDA tec hnique for keV energy ion range measurements.