INFLUENCE OF OXYGEN ON THE COMPOSITION AND SOME PROPERTIES OF THE FILMS OBTAINED BY RF-SPUTTERING FROM A SI3N4 TARGET

Authors
VOLKOV VT SATUNKINA LF
Citation
Vt. Volkov et Lf. Satunkina, INFLUENCE OF OXYGEN ON THE COMPOSITION AND SOME PROPERTIES OF THE FILMS OBTAINED BY RF-SPUTTERING FROM A SI3N4 TARGET, Thin solid films, 247(2), 1994, pp. 145-147
Citations number
9
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
247
Issue
2
Year of publication
1994
Pages
145 - 147
Database
ISI
SICI code
0040-6090(1994)247:2<145:IOOOTC>2.0.ZU;2-1
Abstract
The process of r.f. diode sputtering from a Si3N4 target was investiga ted at various partial pressures of oxygen P(O) in argon sputter gas. It was shown by IR spectroscopy that Si3N4, SiO(x)N(y) and SiO2, films can be produced depending upon the P(O) value. For each case the corr esponding intervals of oxygen pressures were determined. Refractive in dex and chemical etching rates of the prepared films in BHF were measu red.