THE STRUCTURE, MORPHOLOGY AND RESISTIVITY OF IN-SITU PHOSPHORUS-DOPEDPOLYSILICON FILMS

The structural and morphological properties of in situ phosphorus dope d polycrystalline silicon films have been investigated using transmiss ion electron microscopy. The effect of deposition parameters (temperat ure, pressure in a reactor chamber and phosphine-silane flow ratio in the gaseous phase) on the structure, grain size and microroughness of P-doped films have been studied. The peculiarities of recrystallizatio n processes occurring in P-doped films during activating anneal has be en investigated. The assumed production condition dependences of the P -doped film growth and recrystallization as well as the correlation be tween resistivity of the films and their microstructure are discussed on the basis of analysis of the obtained experimental results.