RESONANT RAMAN-SCATTERING STUDIES OF MULTILAYER (IN, GA, AL) (AS, SB)HETEROSTRUCTURES WITH INAS QUANTUM-WELLS

Raman scattering effects have been used to study phonon properties of complex multilayer (In, Ga, Al) (As, Sb) heterostructures with InAs qu antum wells grown by molecular beam epitaxy on GaAs and GaSb substrate s. Raman scattering in the region of folded acoustic phonons gives inf ormation on the periodicity of cladding superlattices and the abruptne ss of their interfaces. Raman scattering by InAs phonon modes due to a n InAs quantum well are strongly enhanced under optical excitation in resonance with the E1 band gap of InAs. Interface modes of InSb are de tected in resonant Raman scattering, in agreement with the intended in terface bond controlled by the beam supply sequence during growth. Res onant excitation results also in the observation of Raman scattering b y a collective intersubband plasmon mode due to a two dimensional elec tron gas in the InAs quantum well. It is shown that a detailed analysi s of complex multilayer structures can be performed based upon resonan t Raman experiments which agrees fairly well with double crystal x-ray diffraction and galvanomagnetic studies.