CHARACTERIZATION OF RECTIFYING CONTACTS ON NATURAL TYPE-IIB DIAMOND

Metal-semiconducting diamond (MS) and metal-insulating diamond-semicon ducting diamond (MIS) contacts were fabricated on the same type IIb si ngle crystal diamond. Direct comparisons of MS and MIS structure chara cteristics were made by analysis of current-voltage and differential c apacitance-voltage (C-V) data. Both the MS and MIS contacts exhibited good rectifying characteristics, with a 5 V rectification ratio > 10(6 ). The depletion layer uncompensated acceptor concentration measured i n both structures by C-V analysis was -1.8 X 10(16) cm-3.