VISIBLE LUMINESCENCE FROM SILICON BY HYDROGEN IMPLANTATION AND ANNEALING TREATMENTS

Authors
PAVESI L GIEBEL G TONINI R CORNI F NOBILI C OTTAVIANI G
Citation
L. Pavesi et al., VISIBLE LUMINESCENCE FROM SILICON BY HYDROGEN IMPLANTATION AND ANNEALING TREATMENTS, Applied physics letters, 65(4), 1994, pp. 454-456
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
65
Issue
4
Year of publication
1994
Pages
454 - 456
Database
ISI
SICI code
0003-6951(1994)65:4<454:VLFSBH>2.0.ZU;2-T
Abstract
Luminescence at an energy higher than the Si band-gap energy has been observed following H implantation and annealing treatments of Si sampl es. This phenomenon is discussed considering the damage caused by the H implantation and its evolution with thermal treatments. No definitiv e answer on the origin of the luminescence is given but various possib le models are proposed.