SPIN-VALVE SENSORS EXCHANGE-BIASED BY ULTRATHIN TBCO FILMS

Citation
Pp. Freitas et al., SPIN-VALVE SENSORS EXCHANGE-BIASED BY ULTRATHIN TBCO FILMS, Applied physics letters, 65(4), 1994, pp. 493-495
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
65
Issue
4
Year of publication
1994
Pages
493 - 495
Database
ISI
SICI code
0003-6951(1994)65:4<493:SSEBUT>2.0.ZU;2-Y
Abstract
Ultrathin TbCo films are used to exchange-bias spin-valve sensors as a n alternative to the commonly used FeMn films. Magnetoresistance value s of 7.8% and sensitivities of 2.5%/Oe are demonstrated for spin-valve stripes where the pinned NiFe layer is exchange biased by a 120-angst rom thick TbCo film. The exchange field can be fine tuned by changing the TbCo layer thickness. A well-biased and linear spin-valve sensor w as fabricated, with a height of 2 mum and a trackwidth of 25 mum, wher e the free layer is biased by the sense current.