MODULATION-DOPED GAINAS GAINASP STRAINED MULTIPLE-QUANTUM-WELL LASERSGROWN BY CHEMICAL BEAM EPITAXY/

Authors
MAWATARI H IGA R SUGIURA H TOHMORI Y YOSHIKUNI Y
Citation
H. Mawatari et al., MODULATION-DOPED GAINAS GAINASP STRAINED MULTIPLE-QUANTUM-WELL LASERSGROWN BY CHEMICAL BEAM EPITAXY/, Applied physics letters, 65(3), 1994, pp. 277-279
Citations number
19
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
65
Issue
3
Year of publication
1994
Pages
277 - 279
Database
ISI
SICI code
0003-6951(1994)65:3<277:MGGSML>2.0.ZU;2-N
Abstract
We report the characteristics of Be-modulation-doped strained multiple -quantum-well (MQW) buried heterostructure lasers grown by chemical-be am epitaxy. Secondary ion mass spectroscopy revealed that the Be-modul ation-doping profile was fabricated and maintained even after annealin g at 620-degrees-C for 30 min, which is the same condition used to fab ricate the buried heterostructure. A linewidth enhancement factor (alp ha parameter) of only 0.8 was obtained in 3X10(18) cm-3 Be-modulation- doped strained MQW Fabry-Perot lasers at a wavelength of 35 nm shorter than the gain peak.