INFLUENCE OF CAP LAYER THICKNESS ON OPTICAL-QUALITY IN IN0.2GA0.8AS GAAS SINGLE QUANTUM-WELLS/

Authors
WANG SM THORDSON JV ANDERSSON TG JIANG S YANG LX SHEN SC
Citation
Sm. Wang et al., INFLUENCE OF CAP LAYER THICKNESS ON OPTICAL-QUALITY IN IN0.2GA0.8AS GAAS SINGLE QUANTUM-WELLS/, Applied physics letters, 65(3), 1994, pp. 336-337
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
65
Issue
3
Year of publication
1994
Pages
336 - 337
Database
ISI
SICI code
0003-6951(1994)65:3<336:IOCLTO>2.0.ZU;2-O
Abstract
Influences of GaAs cap layer thickness on residual strain in partially relaxed, 25-nm-thick In0.2Ga0.8As/GaAs single quantum wells have been investigated by photoluminescence and photoreflectance at 77 K. It wa s found that the residual strain increased and the optical quality imp roved with increasing cap layer thickness. Therefore, both quantum wel l and cap layer thicknesses determine the optical quality in lattice-m ismatched semiconductor heterostructures.