AS P INTERDIFFUSION IN ULTRATHIN INAS/INP STRAINED QUANTUM-WELLS/

Citation
Jm. Sallese et al., AS P INTERDIFFUSION IN ULTRATHIN INAS/INP STRAINED QUANTUM-WELLS/, Applied physics letters, 65(3), 1994, pp. 341-343
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
65
Issue
3
Year of publication
1994
Pages
341 - 343
Database
ISI
SICI code
0003-6951(1994)65:3<341:APIIUI>2.0.ZU;2-E
Abstract
The intermixing process of ultrathin InAs/InP strained quantum well st ructures by thermal annealing at 730-830-degrees-C is investigated by photoluminescence measurements. Analyzing the results using a microsco pic model, the interdiffusion process is characterized by an activatio n energy close to 3.8+/-2.0 eV, leading to an interdiffusion coefficie nt close to 7+/-0.5x10(-7) cm2/s at 830-degrees-C.