PREPARATION OF PBTIO3 THIN-FILMS BY PLASMA-ENHANCED METALORGANIC CHEMICAL-VAPOR-DEPOSITION

Thin films of PbTiO3 have been prepared on glass substrate by plasma-e nhanced metalorganic chemical vapor deposition. Lead dipivaloylmethane , and titanium tetraisopropoxide were used as the source materials. Hi gh crystalline and tetragonal a-axis oriented PbTiO3 film was obtained at rf power of 200 W and substrate temperature of 570-degrees-C. The deposition rate of the film was as high as 0.18 mum/min. The film had a smooth surface and a columnar structure. The average columnar diamet er was about 80 nm. Dielectric constant and tan delta of the deposited film was 250 and 0.04, respectively. The influence of deposition cond itions on deposition rate and film properties has been investigated.