STUDY OF SIO2 SI INTERFACE STATES IN MOS DEVICES BY SURFACE-CHARGE SPECTROSCOPY - APPLICATION TO RAPID THERMAL NITRIDATION OF SILICON/

Authors
ERMOLIEFF A DELEONIBUS S MARTHON S BLANCHARD B PIAGUET J
Citation
A. Ermolieff et al., STUDY OF SIO2 SI INTERFACE STATES IN MOS DEVICES BY SURFACE-CHARGE SPECTROSCOPY - APPLICATION TO RAPID THERMAL NITRIDATION OF SILICON/, Journal of electron spectroscopy and related phenomena, 67(3), 1994, pp. 409-416
Citations number
17
Categorie Soggetti
Spectroscopy
Journal title
Journal of electron spectroscopy and related phenomena → ACNP
ISSN journal
03682048
Volume
67
Issue
3
Year of publication
1994
Pages
409 - 416
Database
ISI
SICI code
0368-2048(1994)67:3<409:SOSSIS>2.0.ZU;2-3
Abstract
Surface charge spectroscopy (SCS) is investigated by X-ray photoelectr on spectroscopy (XPS) and the results are compared with C(V) and G(V) low frequency density of states data obtained on MOS capacitors, perfo rmed using a SILO/RTN (sealed interface local oxidation of silicon/rap id thermal nitridation) based isolation process. The surface density o f states is found to be correlated to initial oxygen content at variou s nitridation temperatures. Good agreement is obtained between both me thods and metallic contamination measurements by secondary ion mass sp ectroscopy (SIMS) for surface state density as low as 10(11) to 10(12) cm-2 eV-1.