SIMPLE METHOD FOR ESTIMATING THE MEMORY DIAGRAM IN SINGLE-MODE SEMICONDUCTOR-LASERS

The authors propose a simple method, based on the probability distribu tion functions of the switch-on time, to predict the appearance of pat tern effects at the output of single-mode semiconductor lasers. The me thod allows one to evaluate the overlap between the switch-on time pro bability distribution functions under repetitive gain-switching and pe riodic '...1111...' sequences of input bits in the return to zero sche me for any operating point of the laser. If the overlap is large enoug h, no-pattern effects will appear at the output when the laser is modu lated with a pseudorandom sequences of input bits. If the contrary hap pens, pattern effects will be observed at the output. Nonmemory bands in the memory region are also obtained.