A HIGH-PERFORMANCE W-BAND INTEGRATED SOURCE MODULE USING GAAS MONOLITHIC CIRCUITS

Authors
HO TC CHEN S TADAYON S PANDE K RICE P GHAHREMANI M
Citation
Tc. Ho et al., A HIGH-PERFORMANCE W-BAND INTEGRATED SOURCE MODULE USING GAAS MONOLITHIC CIRCUITS, IEEE microwave and guided wave letters, 4(7), 1994, pp. 241-243
Citations number
NO
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE microwave and guided wave letters → ACNP
ISSN journal
10518207
Volume
4
Issue
7
Year of publication
1994
Pages
241 - 243
Database
ISI
SICI code
1051-8207(1994)4:7<241:AHWISM>2.0.ZU;2-#
Abstract
A high-performance integrated source module using a U-band MMIC HBT DR O and a U-band MMIC MESFET power amplifier in conjunction with a W-ban d MMIC high-efficiency varactor doubler has been developed for millime ter-wave system applications. This paper describes the development and performance of this W-band integrated source module. Measured results of the complete integrated source module show an output power of 10.6 dBm at 92.6 GHz and less than -126 dBc/Hz phase noise at 5 MHz offset from the carrier. These results represent the highest reported power and phase noise achieved at W-band using HBT, MESFET, and varactor fre quency-doubling technologies.