PREPARATION OF OXYNITRIDE THIN-FILMS OF BANB(OYN)X AND LANB(OYN2)X USING REACTIVE SPUTTERING FROM MULTIPHASE POWDER TARGETS

Authors
COHEN Y RIESS I
Citation
Y. Cohen et I. Riess, PREPARATION OF OXYNITRIDE THIN-FILMS OF BANB(OYN)X AND LANB(OYN2)X USING REACTIVE SPUTTERING FROM MULTIPHASE POWDER TARGETS, Materials science & engineering. B, Solid-state materials for advanced technology, 25(2-3), 1994, pp. 197-202
Citations number
13
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
25
Issue
2-3
Year of publication
1994
Pages
197 - 202
Database
ISI
SICI code
0921-5107(1994)25:2-3<197:POOTOB>2.0.ZU;2-I
Abstract
Thin films of BaNb(O(y)N)x and LaNb(O(y)N2)x have been prepared by rea ctive sputtering. The targets used were multiphase ones. A wide anion composition range is obtained, including the more difficult to obtain compositions having high concentrations of nitrogen. The Ba based film s exhibit a crystalline structure with a lattice parameter slightly la rger than that reported for bulk BaNbO2N. The La based films are amorp hous. The films have a low electronic conductivity. The stoichiometric Ba based films are stable on Si in a reducing atmosphere up to approx imately 875-degrees-C, while the La based ones are stable up to approx imately 480-degrees-C.