SYSTEMATIC TRENDS OF YBA2CU3O7-DELTA THIN-FILMS POST ANNEALED IN LOW-OXYGEN PARTIAL PRESSURES

Systematic studies have been performed on 1000 angstrom YBa2Cu3O7-delt a films produced by the BaF2 process and annealed in an oxygen partial pressure (p(O2)) range from 740 Torr to 10 mTorr as well as a tempera ture range from 600 to 1050-degrees-C. The results show that while hig h quality films can be annealed in a wide range of oxygen partial pres sure, they have different characteristics. In general, crystalline qua lity and T(c) are optimized at high p(O2) and high annealing temperatu re, while strong flux pinning and low normal state resistivity are ach ieved at lower values of both variables. Under optimized low p(O2) con ditions, an ion channeling chi(min) of 6% is obtained on films as thic k as 5000 angstrom. This study will serve as a useful guide to tailori ng film properties to the application at hand.