MICROMECHANICAL CHARACTERIZATION OF CHEMICALLY VAPOR-DEPOSITED CERAMIC FILMS

In this study, nanoindentation is used to determine Young's modulus of chemically vapor deposited films consisting of silicon carbide, silic on nitride, boron carbide, boron nitride, and silicon dioxide. Diethyl silane and ditertiarybutylsilane were used as precursors in the synthe sis of the silicon-based material, while triethylamine borane complex was used for the boron-based material. The modulus of these films was observed to be dependent on the processing conditions and resulting co mposition of the deposits. For the silicon carbide, silicon nitride, b oron carbide, and boron nitride films, the carbon content in the films was observed to increase significantly with higher deposition tempera tures, resulting in a corresponding decrease in values of Young's modu lus. The composition of the silicon dioxide films was near stoichiomet ry over the investigated deposition temperature range (375-475-degrees -C) with correspondingly small variations in the micromechanical prope rties. Subsequent annealing of these oxide films resulted in a signifi cant increase in the values of Young's modulus due to hydrogen and moi sture removal.