DIAMOND GROWTH ON CARBIDE SURFACES USING A SELECTIVE ETCHING TECHNIQUE

Microwave plasma-enhanced chemical vapor deposition of diamond films o n silicon carbide and tungsten carbide (with 6% cobalt) surfaces using fluorocarbon gases has been demonstrated. No diamond powder pretreatm ent is necessary to grow these films with a (100) faceted surface morp hology. The diamond films are characterized by scanning electron micro scopy and Raman spectroscopy. The proposed nucleation and growth mecha nism involves etching of the noncarbon component of the carbide by ato mic fluorine to expose surface carbon atoms and diamond nucleation and growth on these exposed carbon atoms. Hydrogen is necessary in the gr owth process to limit the rapid etching of the carbide substrates by c orrosive fluorine atoms.