PHOTOCONDUCTIVITY IN ZNSE UNDER HIGH ELECTRIC-FIELDS

High voltage photoconductive switches utilizing polycrystalline ZnSe w ere investigated. Experiments have been performed on polycrystalline Z nSe switches in a longitudinal geometry. Electrodes of perforated meta l films, a transparent liquid electrolyte, plasma, and ultraviolet-lig ht-generated carriers were used. High-bias fields of up to 100 kV/cm a nd current densities over 100 kA/cm2 can be applied to the polycrystal line ZnSe switches. Nonlinear effects were observed at high fields wit h near band edge illumination. Applications of these effects are discu ssed.