BROAD-BAND MODELING AND TRANSIENT ANALYSIS OF MCM INTERCONNECTIONS

Authors
Citation
J. Peeters et E. Beyne, BROAD-BAND MODELING AND TRANSIENT ANALYSIS OF MCM INTERCONNECTIONS, IEEE transactions on components, packaging, and manufacturing technology. Part B, Advanced packaging, 17(2), 1994, pp. 153-160
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic","Engineering, Manufacturing","Material Science
ISSN journal
10709894
Volume
17
Issue
2
Year of publication
1994
Pages
153 - 160
Database
ISI
SICI code
1070-9894(1994)17:2<153:BMATAO>2.0.ZU;2-P
Abstract
In this paper, conductive losses of multi-chip module interconnections are analysed. A distributed network model for the conductor surface i mpedance is extended to include the transition from DC resistivity to high frequency losses and to cover the effect of barrier and adhesion layers. Using this model, a broadband loss expression is derived. This loss expression can be implemented in network simulators for transien t analysis of lossy interconnections. The validity and applicability o f the model is experimentally verified by comparison with measured S-p arameters. Measurements extend from 45 MHz to 18 GHz. They are perform ed on test structures realised with two different MCM-D technologies. Excellent correspondence between measurements and simulations is achie ved, even when magnetic effects of a thick nickel barrier layer are in volved. The models are incorporated in the transient analysis network simulation program Transplus. Several simulation examples using Transp lus are shown.