Mm. Martins et Jas. Dias, CMOS SHUNT REGULATOR WITH BANDGAP REFERENCE FOR AUTOMOTIVE ENVIRONMENT, IEE proceedings. Circuits, devices and systems, 141(3), 1994, pp. 157-161
A temperature-stable shunt regulator for automotive environments using
standard digital CMOS technology is described. The new technique empl
oyed to implement the bandgap reference cell reduces the influence of
the high offset input voltages present in the CMOS op-amps and allows
for a simple and cost-effective design of a nontrimmed chip with good
temperature characteristics. The shunt regulator operates from battery
voltages as low as 6 V and withstands voltage peaks up to 120 V. The
regulated output voltage (5.15 V) presents a temperature coefficient o
f 140 ppm/degrees-C in the -15 to +105-degrees-C temperature range. Th
e shunt regulator was integrated in a custom automotive CMOS digital c
hip and occupies 0.53 mm2.