DYNAMICAL RECOVERY OF INSB(123) BETWEEN 340-DEGREES-C AND 510-DEGREES-C

The stress-strain curves of InSb[123] have been investigated in the te mperature range extending from 340 to 510-degrees-C. The two stages of dynamical recovery typical for elemental and compound semiconductors are observed in this material. The underlying micromechanical processe s are identified as diffusion-controlled climb and cross-slip respecti vely. There is no indication of a further regime of dynamical recovery , in contrast with the behaviour of Ge and Si with [123] orientation.