DISSIPATION OF CONTACT ELECTRIFIED ELECTRONS ON DIELECTRIC THIN-FILMSWITH SILICON SUBSTRATE

We studied microscopic contact electrification on three different kind s of dielectric thin films with the same silicon substrate, i.e., SiO2 /Si, Si3N4/SiO2/Si (NOS) and SiO2/Si3N4/SiO2/Si, using a modified atom ic force microscope (AFM). From the results, we clarified that reprodu cible and controllable contact electrification is possible on each sam ple. From the time evolution of the peak values and full widths at hal f-maximum (FWHMs) of electrostatic force due to contact-electrified el ectrons, we found that the stable-unstable phase transition occurs onl y on SiO2/Si and SiO2/Si3N4/SiO2/Si thin films with the SiO2 surface.