REVERSE-MODE SINGLE-ION BEAM-INDUCED CHARGE (R-MODE SIBIC) IMAGING FOR THE TEST OF TOTAL-DOSE EFFECTS IN N-CH METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR (MOSFET)

To achieve quantitative analysis of site-dependent total dose effects in metal-oxide-semiconductor field-effect transistors (MOSFETs), a new imaging technique designated as the reverse-mode single ion beam indu ced charge (R-mode SIBIC) imaging for sample positioning combined with accurate ion counting has been developed using the single-ion micropr obe. With only five He single ions per pixel, we have succeeded in obt aining images of n-ch MOSFET and n-type Si regions fabricated on a p-w ell without any degradation of device characteristics. The R-mode SIBI C imaging has made it possible to count exactly the number of ions inc ident upon the MOSFET during radiation hardness tests.