CRYOGENIC CMOS WITHOUT AND ISOLATION WELL

Authors
JANG JG GILDENBLAT G
Citation
Jg. Jang et G. Gildenblat, CRYOGENIC CMOS WITHOUT AND ISOLATION WELL, Cryogenics, 34(8), 1994, pp. 689-690
Citations number
8
Categorie Soggetti
Physics, Applied",Thermodynamics
Journal title
Cryogenics → ACNP
ISSN journal
00112275
Volume
34
Issue
8
Year of publication
1994
Pages
689 - 690
Database
ISI
SICI code
0011-2275(1994)34:8<689:CCWAIW>2.0.ZU;2-R
Abstract
A cryogenic CMOS inverter is described, which is fabricated on a moder ately doped p-type Si substrate without an n-type isolation well for a cryogenic PMOSFET. Operation of the cryogenic PMOSFET is based on the freeze-out of charge carriers in the quasi-neutral region of the mode rately doped Si substrate.