HIGH-BRIGHTNESS GREEN LIGHT-EMITTING-DIODES

Authors
EASON DB HUGHES WC REN J RIEGNER M YU Z COOK JW SCHETZINA JF CANTWELL G HARSCH WC
Citation
Db. Eason et al., HIGH-BRIGHTNESS GREEN LIGHT-EMITTING-DIODES, Electronics Letters, 30(14), 1994, pp. 1178-1180
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
14
Year of publication
1994
Pages
1178 - 1180
Database
ISI
SICI code
0013-5194(1994)30:14<1178:HGL>2.0.ZU;2-W
Abstract
II-VI heterostructures composed of ZnSe/ZnTeSe layers have been employ ed to develop high-brightness green, light-emitting diodes operating a t peak wavelengths in the pure green spectral region (508-514nm). The brightest devices produce 792muW (10 mA, 4V) peaked at 510nm. This cor responds to an external efficiency of 2% and a luminous performance of 8.0 lumen/W.