GRUNN EFFECT IN HETEROJUNCTION BIPOLAR-TRANSISTORS

Authors
POSSE VA JALALI B
Citation
Va. Posse et B. Jalali, GRUNN EFFECT IN HETEROJUNCTION BIPOLAR-TRANSISTORS, Electronics Letters, 30(14), 1994, pp. 1183-1184
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
14
Year of publication
1994
Pages
1183 - 1184
Database
ISI
SICI code
0013-5194(1994)30:14<1183:GEIHB>2.0.ZU;2-A
Abstract
The Gunn effect in III-IV heterojunction bipolar transistors is invest igated using hydrodynamic simulations. It is shown that Gunn domains n ucleate and propagate in the collector drift region of an npn AlGaAs/G aAs transistor in which the electric field at the base-collector space charge region is properly engineered.