IMPROVEMENTS IN THE 860A CS SPUTTER SOURCE FOR HIGH-ENERGY ION-IMPLANTATION

Authors
JIAO GY
Citation
Gy. Jiao, IMPROVEMENTS IN THE 860A CS SPUTTER SOURCE FOR HIGH-ENERGY ION-IMPLANTATION, Vacuum, 45(9), 1994, pp. 951-954
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Vacuum → ACNP
ISSN journal
0042207X
Volume
45
Issue
9
Year of publication
1994
Pages
951 - 954
Database
ISI
SICI code
0042-207X(1994)45:9<951:IIT8CS>2.0.ZU;2-7
Abstract
A brief description is given of a method to increase the negative ion current of a Model 860A sputter source through employing a Ta sheet io nizer of spherical geometry, rebuilding the focusing geometry electrod e system and enhancing the cathode target voltage. In order to prolong the lifetime of the sputter sample, a new design named Three- wheel, 21-target probe changing mechanism, has been constructed and is briefl y described in this paper.