INVESTIGATION OF DEPTH DISTRIBUTIONS OF DEFECTS IN SI CREATED BY HIGH-ENERGY TI IONS

Defect distributions in Si created by high energy MeV Ti ions were stu died as a function of the irradiation angle and energy using Rutherfor d backscattering/channelling. A silicon crystal of [100] direction was irradiated at room temperature by 1.0-2.0 MeV Ti ions under tilted an gles with a dose of 5 x 10(14) ions cm-2. It is found that the damage peak produced by 1.0 MeV Ti+ is higher than one produced by 2.0 MeV Ti + at the same dose. The defect distributions extracted from the presen t experiment-are compared with TRIM '89 calculations. The results show that the shape and depth of the damage profile under tilted angle imp lantation are qualitatively described by TRIM '89.