IV CHARACTERISTICS OF 1D-0D-1D DOUBLE-BARRIER STRUCTURES AND PERSISTENCE OF FINE-STRUCTURE AT HIGH-TEMPERATURES

A theoretical investigation of coupled quantum-wire-quantum-dot-quantu m-wire resonant-tunneling diodes is presented, with particular emphasi s on the basic mechanisms producing the fine structure in the current- voltage characteristics. The possibility of having two different types of fine structure is remarked upon, and an explanation is proposed fo r the relative lack of thermal smearing observed in certain devices th at could be important for the use of low-dimensional devices at high t emperatures. The I-V curves are calculated numerically for two typical structures and very good agreement with experiments is obtained.