RESONANT RAMAN-SCATTERING DUE TO BOUND-CARRIER SPIN-FLIP IN GAAS ALXGA1-XAS QUANTUM-WELLS

We study Raman scattering by spin flips of acceptor-bound holes in p-t ype GaAs/AlxGa1-xAs multiple quantum wells in normal and tilted magnet ic fields. It is shown that different mechanisms are responsible for t he scattering under excitation in resonance with the following complex es; exciton bound to neutral acceptor (A0X) and a localized exciton ne ighboring as a neutral acceptor. It is demonstrated that in the Farada y backscattering geometry the A0X-mediated scattering process can be c onsidered as a double spin flip because it includes an acoustic-phonon -induced spin flip of an electron in the photocreated A0X complex. In tilted magnetic fields an additional satellite line A0X' appears in th e Raman spectrum due to the Zeeman interaction of the electron spin wi th the in-plane field component. The neutral-acceptor and electron g f actors are directly measured as a function of the quantum-well width. Two other lines of the A0X-related scattering are attributed to the bo und-hole interlevel transitions +/-3/2 --> -/+1/2, which allow the det ermination of the interlevel splitting and an analysis of its inhomoge neous broadening induced by fluctuations in the well thickness.