IN-SITU ELLIPSOMETRIC CONTROL OF SI1-XGEX SI HETEROSTRUCTURES GROWN BY CHEMICAL BEAM EPITAXY/

Authors
BOUCAUD P GLOWACKI F FERRIEU F LARRE A PERIO A BENSAHEL D
Citation
P. Boucaud et al., IN-SITU ELLIPSOMETRIC CONTROL OF SI1-XGEX SI HETEROSTRUCTURES GROWN BY CHEMICAL BEAM EPITAXY/, Thin solid films, 248(1), 1994, pp. 1-5
Citations number
13
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
248
Issue
1
Year of publication
1994
Pages
1 - 5
Database
ISI
SICI code
0040-6090(1994)248:1<1:IECOSS>2.0.ZU;2-D
Abstract
In situ ellipsometric characterizations of Si1-xGex alloys are present ed. The samples are grown by chemical beam epitaxy using silane and ge rmane. The growth process (kinetics, composition etc.) is in situ cont rolled using a rotating-polarizer multiwavelength ellipsometer. Severa l examples of heteroepitaxy followed by ellipsometry are shown: desorp tion of the native oxide and the initial growth stages are analysed at different photon energies. The sequential heteroepitaxy of Si0.85Ge0. 15 on Si and Si on Si0.85Ge0.15 is investigated.