THE EFFECT OF PRODUCTION CONDITIONS FOR IN-SITU PHOSPHORUS-DOPED LPCVD POLYSILICON IN MONOSILANE PHOSPHINE SYSTEM ON THE DEPOSITION PROCESSKINETICS

Authors
TURTSEVICH AS KRASNITSKY VY EMELYANOV VA NALIVAIKO OY KRAVTSOV SV
Citation
As. Turtsevich et al., THE EFFECT OF PRODUCTION CONDITIONS FOR IN-SITU PHOSPHORUS-DOPED LPCVD POLYSILICON IN MONOSILANE PHOSPHINE SYSTEM ON THE DEPOSITION PROCESSKINETICS, Thin solid films, 248(1), 1994, pp. 28-31
Citations number
22
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
248
Issue
1
Year of publication
1994
Pages
28 - 31
Database
ISI
SICI code
0040-6090(1994)248:1<28:TEOPCF>2.0.ZU;2-I
Abstract
The effect of phosphine/monosilane flow ratio value gamma in the range of 0-0.02 on the apparent activation energy E(a) for an in situ phosp horus-doped polysilicon deposition process has been investigated. A st rong dependence of E(a) on the gamma value has been found. The margina l value of gamma has been determined whereby the apparent activation e nergy is ''saturated'' and becomes practically independent on the phos phine/monosilane flow ratio. An explanation of the obtained results on the basis of two reaction paths existing for the phosphorus-doped pol ysilicon deposition process in the phosphine/monosilane system has bee n proposed.