As. Turtsevich et al., THE EFFECT OF PRODUCTION CONDITIONS FOR IN-SITU PHOSPHORUS-DOPED LPCVD POLYSILICON IN MONOSILANE PHOSPHINE SYSTEM ON THE DEPOSITION PROCESSKINETICS, Thin solid films, 248(1), 1994, pp. 28-31
The effect of phosphine/monosilane flow ratio value gamma in the range
of 0-0.02 on the apparent activation energy E(a) for an in situ phosp
horus-doped polysilicon deposition process has been investigated. A st
rong dependence of E(a) on the gamma value has been found. The margina
l value of gamma has been determined whereby the apparent activation e
nergy is ''saturated'' and becomes practically independent on the phos
phine/monosilane flow ratio. An explanation of the obtained results on
the basis of two reaction paths existing for the phosphorus-doped pol
ysilicon deposition process in the phosphine/monosilane system has bee
n proposed.