NEGATIVE-DIFFERENTIAL CONDUCTIVITY MEASURED ON A GERMANIUM LAYER ON SI(001)

Authors
MUSSIG HJ KRUGER D HINRICH S HANSSON PO
Citation
Hj. Mussig et al., NEGATIVE-DIFFERENTIAL CONDUCTIVITY MEASURED ON A GERMANIUM LAYER ON SI(001), Surface science, 314(3), 1994, pp. 120000884-120000888
Citations number
12
Categorie Soggetti
Chemistry Physical
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
314
Issue
3
Year of publication
1994
Pages
120000884 - 120000888
Database
ISI
SICI code
0039-6028(1994)314:3<120000884:NCMOAG>2.0.ZU;2-3
Abstract
The morphology and the electronic structure of heteroepitaxial germani um layers grown pseudomorphically by solution epitaxy on Si(001) has b een investigated by scanning tunneling microscopy (STM) and scanning t unneling spectroscopy (STS). A significant decrease of tunneling curre nt at a sample voltage of 1.5 V is observed in areas of 0.5 nm diamete r between dimer rows. This decrease is due to a negative-differential conductivity at a tunnel diode configuration consisting of a surface d efect structure of the germanium layer and the STM tungsten tip.