ADHESION OF SILVER FILMS TO ION-BOMBARDED SILICON-CARBIDE - ION-DOSE DEPENDENCE AND WEIBULL STATISTICAL-ANALYSIS OF PULL-TEST RESULTS

Citation
Ra. Erck et al., ADHESION OF SILVER FILMS TO ION-BOMBARDED SILICON-CARBIDE - ION-DOSE DEPENDENCE AND WEIBULL STATISTICAL-ANALYSIS OF PULL-TEST RESULTS, Journal of adhesion science and technology, 8(8), 1994, pp. 885-895
Citations number
19
Categorie Soggetti
Engineering, Chemical","Material Science",Mechanics
ISSN journal
01694243
Volume
8
Issue
8
Year of publication
1994
Pages
885 - 895
Database
ISI
SICI code
0169-4243(1994)8:8<885:AOSFTI>2.0.ZU;2-F
Abstract
Silver films were deposited by evaporation onto polished silicon carbi de substrates that had been sputtered for various lengths of time with 500 eV ions. The adhesion strength of the films was measured as a fun ction of the ion bombardment time and species with a pull-type adhesio n tester. Adhesion of Ag to argon-ion-sputtered surfaces was low excep t at the highest dose, in which case very good adhesion was measured. In contrast, oxygen/argon-ion sputtering produced a rapid rise in adhe sion strength, but adhesion was limited to less than 60 MPa, even for lengthy bombardment. The applicability of Weibull statistical analysis to the distribution of pull-test failure strengths was investigated. A good fit of the data to the Weibull expression was observed. A signi ficant Weibull threshold stress was found and the Weibull modulus was low.