Sa. Kamh et Fas. Soliman, SELF AUTONOMOUS OSCILLATOR - DESIGN, CHARACTERIZATION, MODELING AND COMPUTER-ANALYSIS BASED ON NDR DEVICES, Arab Gulf journal of scientific research, 12(2), 1994, pp. 255-271
Tunnel diode is still regarded as a very useful device in R.F signal p
rocessing systems because of its wider band width, temperature stabili
ty and lower noise, compared with other diodes. Analytical and experim
ental investigations and computer program technique has been carried o
ut to control the frequency, amplitude, waveform and output power for
different types of tunnel diodes. It is found that the amplitude, freq
uency and shape of oscillations depend mainly on the biasing condition
, and diode-and circuit-parameters. The frequency and amplitude increa
se with increasing the bias voltage, reaching a maximum value followed
by a plateau region, then they decrease at high bias values, which re
flects the limits of the dynamic negative conductance of the tunnel di
odes. Results of the sinusoidal oscillations are obtained using InSb t
unnel diode having the frequency value of 2.35 MHz. On the other hand,
output waveform becomes approximately square wave in case of GaAs sam
ples having the frequency of 0.80 MHz is obtained. The experimental re
sults of the relaxation oscillator show good agreement with the predic
ted characterization based on the analytical solution and a computer p
rogram technique.