GIANT MAGNETORESISTANCE DUE TO SPIN-DEPENDENT INTERFACE SCATTERING

Spin-dependent electrical resistivity due to scattering by displaced i nterface atoms has been computed for a layered CuCo superlattice, usin g full-potential multiple-scattering theory with no free parameters. T he magnetoresistance ratio DELTAR/R(up up) obtained for this scatterin g mechanism is 25.03. When interface resistivity, weighted by interpre tation concentration c congruent-to 0.10, is combined with bulk resist ivity, DELTAR/R is in the expected experimental range for adjacent CuC oCu layers. This resistance mechanism produces spin-dependent steady-s tate chemical potentials, relevant to the bipolar spin switch.