EPITAXY AND DOMAIN GROWTH OF PB ON NI(001)

Citation
T. Tse et al., EPITAXY AND DOMAIN GROWTH OF PB ON NI(001), Journal of physics. Condensed matter, 6(31), 1994, pp. 6111-6123
Citations number
13
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09538984
Volume
6
Issue
31
Year of publication
1994
Pages
6111 - 6123
Database
ISI
SICI code
0953-8984(1994)6:31<6111:EADGOP>2.0.ZU;2-Y
Abstract
We study the growth of the c(2 x 2) structure of Pb on Ni(001) with hi gh-resolution x-ray diffraction. By monitoring the adsorbate-substrate and the adsorbate-adsorbate interference diffraction peaks, we are ab le to determine the registry and growth process of the first overlayer . Pb atoms change from hollow site to non-hollow site growth as covera ge increases. Results at higher substrate temperatures indicate a diff erent growth process at low coverage. We propose a model of adsorbate aggregation at sites in line with Ni atoms around pinning centres to a ccount for the observed results.