NOVEL ELFIN (EMBEDDED-METAL-LAYER PROCESS FOR FULLY INTEGRATED NOR) CELL FOR 16 64 MBIT FLASH EEPROM/

Authors
KAWAZU Y HAYASHI T OHNO M ONO T UCHIYAMA A
Citation
Y. Kawazu et al., NOVEL ELFIN (EMBEDDED-METAL-LAYER PROCESS FOR FULLY INTEGRATED NOR) CELL FOR 16 64 MBIT FLASH EEPROM/, Electronics Letters, 30(15), 1994, pp. 1209-1210
Citations number
3
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
15
Year of publication
1994
Pages
1209 - 1210
Database
ISI
SICI code
0013-5194(1994)30:15<1209:NE(PFF>2.0.ZU;2-F
Abstract
A novel cell structure named ELFIN (embedded-metal-layer process for f ully integrated NOR) is proposed for the 16/64 Mbit flash EEPROM. The ELFIN cell introduces the selfaligned metal drain-pad and source-line technology. It is demonstrated in a 3.0 mum2 cell using the 0.6 mum de sign rule, i.e. a 25% reduction in cell size is attained compared with the conventional NOR-type cell with the same design rule. Excellent e lectrical characteristics of programming, erasing and endurance are ac hieved.