LARGE-AREA LOW-CAPACITANCE INP INGAAS MSM PHOTODETECTORS FOR HIGH-SPEED OPERATION UNDER FRONT AND REAR ILLUMINATION/

Authors
HIERONYMI F BOTTCHER EH DROGE E KUHL D KOLLAKOWSKI S BIMBERG D
Citation
F. Hieronymi et al., LARGE-AREA LOW-CAPACITANCE INP INGAAS MSM PHOTODETECTORS FOR HIGH-SPEED OPERATION UNDER FRONT AND REAR ILLUMINATION/, Electronics Letters, 30(15), 1994, pp. 1247-1248
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
15
Year of publication
1994
Pages
1247 - 1248
Database
ISI
SICI code
0013-5194(1994)30:15<1247:LLIIMP>2.0.ZU;2-P
Abstract
Large-area long-wavelength metal-semiconductor-metal (MSM) photodetect ors fabricated on the Fe-doped InP/InGaAs material system have been ch aracterised under front and rear illumination employing different thic knesses of the photoactive layer. With a 350mum diameter detection are a, theoretically limited capacitance values (0.75pF) and very low depl etion voltages (< 1 V) were obtained. For an active layer thickness of 0.7mum, the devices show an external quantum yield of up to 60% and a bandwidth of 0.95 GHz at 10V bias.