Authors
Citation
Y. Gonzalez et al., DETERMINATION OF THE DEFORMATION POTENTIALS OF GAAS0.80P0.20, Journal of applied physics, 76(3), 1994, pp. 1951-1953
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
76
Issue
3
Year of publication
1994
Pages
1951 - 1953
Database
ISI
SICI code
0021-8979(1994)76:3<1951:DOTDPO>2.0.ZU;2-2
Abstract
Deformation potentials can be determined by measuring the variation of
the energy of the electronic transitions with strain. In this work, t
he hydrostatic and shear potentials of the band-gap electronic transit
ion (E0) and the transitions along the [111] direction (E1) of GaAs1-x
Px, x almost-equal-to 0.20, have been determined by electroreflectance
characterization of GaAs1-xPx layers with different levels of strain.