GAIN ENHANCEMENT IN ALAS INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS USING AN EMITTER LEDGE

Authors
KYONO CS BINARI SC IKOSSIANASTASIOU K
Citation
Cs. Kyono et al., GAIN ENHANCEMENT IN ALAS INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS USING AN EMITTER LEDGE, Journal of applied physics, 76(3), 1994, pp. 1954-1955
Citations number
6
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
76
Issue
3
Year of publication
1994
Pages
1954 - 1955
Database
ISI
SICI code
0021-8979(1994)76:3<1954:GEIAIH>2.0.ZU;2-0
Abstract
Improved gain was observed at low currents when a thin emitter ledge w as incorporated into npn In0.52Al0.48As/In0.53Ga0.47As heterojunction bipolar transistors. A 40-mm-thick n-In0.52Al0.48As emitter ledge resu lted in over four times higher gain at low biases due to reduced surfa ce recombination.